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Say hello to the heterogeneous revolution
christopher Maxey¡¢Justin Kim¡¢Dave Hodge¡¢Mark Soler¡¢Bennett Coy¡¢Dan Green¡¢James Buckwalter ºÍ Florian Herrault À´×Ô PseudolithIC ¹«Ë¾
±àÕß»° Editorial
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PVTÓëÒºÏà·¨µÄ¼¯³É´´ÐÂ
The Path of Innovation in the Elimination Contest of the SiC Substrate Industry: Collaborative Innovation of PVT and Solution Growth Method
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Òµ½ç¶¯Ì¬ Industry
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Investment of HK$6.9 billion: Hong Kong's first 8-inch silicon carbide wafer plant signed a contract
Voyant ÍƳöоƬ¼¶FMCW¼¤¹âÀ×´ï´«¸ÐÆ÷
Voyant launches FMCW LiDAR sensor on a chip
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China's first high-voltage, radiation-resistant silicon carbide (SiC) power device has been successfully developed and validated through space tests
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The SiC production line project of Silan Jihong is expected to be topped off in Q1
Î÷°àÑÀ»ñµÃÅ·ÖÞÅú×¼£¬½«ÏòDiamond Foundry Europeг§Ìṩ8100ÍòÅ·ÔªµÄ²¹Ìù
Spain gains European approval for €81m subsidy for Diamond Foundry Europe's new fab
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Research Progress on Radiation of Gallium Oxide Power Devices
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looking forward to 2025
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High-power lasers: wells or dots?
Yongkun Sin£¬Aerospace Corporation
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Highly Coherent Grain Boundaries Induced by Local Pseudomirror Symmetry in ¦Â-Ga2O3
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Realising chiral emission with topological LEDs
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AI drives data centre energy consumption increase
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Scrutinising traps in GaN MOS-HEMTs
Barry O'Sullivan£¬IMEC
¿Æ¼¼Ç°ÑØ Research Review
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Non-invasive, Sub-micrometer-level precise electric field detection
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Realising red LEDs on ScAlMgO4 substrates
SiC MOSFETs: 
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SiC MOSFETs: Understanding the benefits of plasma nitridation
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