CMOS: Not just for silicon

When AI Meets Compound Semiconductors: An Energy Revolution Poised to Reshape a Trillion-Dollar Market

Infineon is set to invest an additional 50 billion yuan to build the world's largest 200 mm silicon-carbide power semiconductor fab.

Nexperia announces SiC diodes for AI servers.

SICC has launched its IPO, aiming to raise approximately RMB 1.8 billion to expand large-diameter SiC substrate capacity

JX to boost InP substrate production capacity by 20%.

MACOM completes transfer of Research Triangle Park GaN-on-SiC fab.

Development of Generic Process Technology for AlScN Piezoelectric MEMS

Launching SiC into space

Breakthrough in Promoting Low-Field-Driven Domain Wall Motion in Wurtzite Ferroelectrics

Wolfspeed: Rejuvenated by restructuring?

A GaN-on-silicon foundation for Ga2O3 transistors

Cooling RF GaN HEMTs with all-around diamond

Wuhan and Xidian University have made groundbreaking progress in the field of heterogeneous integration of wide bandgap semiconductors with integration material and functional properties

Hybrid DBR: A Single-Process Innovation Delivers Dual Benefits for Micro LED Manufacturing

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